Physics of Semiconductor Devices
615.760
Course Description
This course examines the physical principles underlying semiconductor device
operation and the application of these principles to specific devices. Emphasis
is placed on understanding device operation, rather than on circuit properties.
Topics include elementary excitations in semiconductors such as phonons,
photons, conduction electrons and holes; charge and heat transport; carrier
trapping and recombination; effects of high doping; contacts; the p-n junction;
the junction transistor; surface effects; the MIS diode; and the MOSFET.
Syllabus
- Overview-Semiconductor Fundamentals
- Device Physics-Current Transport, Diffusion Theory
- Bipolar Devices-pn junction, breakdown
- Bipolar Devices-diode types, structures, fabrication
- Bipolar Devices-HF Diodes, LEDs, SC Lasers
- Bipolar Devices-Photodetectors, Solar Cells
- Bipolar Devices-Junction Transistor, Current Models
- Bipolar Devices-HF Transistor Properties, Noise, Cut-off
- Unipolar Devices-Schottky Barrier, Ohmic Contact
- Unipolar Devices-The MOS Capacitor
- Unipolar Devices-MOSFET
- Unipolar Devices-MESFETs,J-FETs, Scaling
- Other Devices-CCDs, SAWs
- Final Examination
Prerequisites
615.454
Quantum Mechanics or the equivalent
Instructor
Harry K. Charles, Jr. is the Assistant Department Head for Engineering in
the Technical Services Department at the Johns Hopkins University Applied Physics
Laboratory (APL). Dr. Charles is a member of the Principal Professional Staff at APL and
is a specialist in solid state physics, semiconductor devices, electronic materials and
packaging. He is a fellow of both the IEEE and the International Microelectronics and
Packaging Society.
Textbook
High Speed Semiconductor Devices by S.M.Sze
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Courses | Applied
Physics
| Part-Time Engineering
June 1998